Electronic Materials and Devices,
Edition 1
By David K. Ferry and Jonathan Bird
Publication Date:
18 Jun 2001
Description
This book provides the knowledge and understanding necessary to comprehend the operation of individual electronic devices that are found in modern micro-electronics. As a textbook, it is aimed at the third-year undergraduate curriculum in electrical engineering, in which the physical electronic properties are used to develop an introductory understanding to the semiconductor devices used in modern micro-electronics.
The emphasis of the book is on providing detailed physical insight into the microscopic mechanisms that form the cornerstone for these technologies. Mathematical treatments are therefore kept to the minimum level necessary to achieve suitable rigor.
* Thorough introduction to the key principles of quantum mechanics
* Semiconductor statistics, impurities, and controlled doping
* Detailed analysis of the operation of semiconductor devices, including p-n junctions, field-effect transistors, metal-semiconductor junctions and bipolar junction transistors
* Discussion of optoelectronic devices such as light-emitting diodes (LEDs) and lasers
* Chapters on the device applications of dielectrics, magnetic materials, and superconductors
The emphasis of the book is on providing detailed physical insight into the microscopic mechanisms that form the cornerstone for these technologies. Mathematical treatments are therefore kept to the minimum level necessary to achieve suitable rigor.
Key Features
* Covers crystalline structure* Thorough introduction to the key principles of quantum mechanics
* Semiconductor statistics, impurities, and controlled doping
* Detailed analysis of the operation of semiconductor devices, including p-n junctions, field-effect transistors, metal-semiconductor junctions and bipolar junction transistors
* Discussion of optoelectronic devices such as light-emitting diodes (LEDs) and lasers
* Chapters on the device applications of dielectrics, magnetic materials, and superconductors
About the author
By David K. Ferry, Arizona State University, Tempe, U.S.A.; and Jonathan Bird, Arizona State University
Table of Contents
Preface
1. Introduction
1.1 Modern VLSI
1.2 The Driving Forces for Continued Integration Growth
1.3 Moore's Law
1.4 Types of Materials
References
2. The Crystalline Nature of Materials
2.1 The Various States of Matter
2.2 Space Lattices
2.3 Crystalline Directions
2.4 X-Ray Diffraction
References
Problems
3. The Wave Mechanics of Electrons
3.1 The Photoelectric Effect
3.2 Electrons as Waves
3.3 The Schrödinger Equation
3.4 Some Simple Potentials
3.5 Tunneling Through Barriers
3.6 Quantum Wells
3.7 The Particle in a Box
3.8 Atomic Energy Levels
References
Problems
4. Semiconductors
4.1 Periodic Potentials
4.2 Bloch's Theorem and Brillouin Zones
4.3 The Kronig-Penney Model
4.4 Nearest-Neighbor Coupling-The Tight-Binding Approach
4.5 Three Dimensions and the Band Structure for Si and GaAs
4.6 Effective Mass of the Electron
4.7 Alloys and Heterostructures
4.8 The Atoms in Motion
4.9 Types of Materials
Problems
5. Electrical Transport
5.1 Fermi-Dirac Statistics
5.2 Intrinsic Semiconductors
5.3 Extrinsic Semiconductors
5.4 Electrical Conductivity
5.5 Conductivity in a Magnetic Field
5.5.1 Low Magnetic Field
5.5.2 High Magnetic Field
5.5.3 The Quantum Hall Effect
5.6 Majority and Minority Carriers
5.7 Lifetimes, Recombination, and the Diffusion Equation
5.8 The Work Function
References
Problems
6. Semiconductor Devices
6.1 The p-n Junction
6.1.1 Electrostatics of the p-n Junction
6.1.2 Current Flow in p-n Junctions
6.1.3 Diodes Under Large Reverse Bias
6.2 The Bipolar Transistor
6.2.1 Current Flow in the BJT
6.2.2 The Current Gain a
6.3 The Metal-Semiconductor Junction
6.4 The Schottky-Gate Transistor
6.5 The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
6.5.1 The MOS Structure and the Surface Channel
6.5.2 The MOSFET Characteristics
6.6 The High-Electron-Mobility Transistor
6.7 Complementary MOS Structures
6.7.1 The Complementary Circuit
6.7.2 The DRAM Cell
References
Problems
7. Dielectric Material
7.1 Dielectric Effects
7.1.1 Lattice Polarization
7.1.2 Electronic Polarizability
7.2 Piezoelectric Effects
7.3 Ferroelectric Material
7.4 Pyroelectric Effects
7.5 Micro-Electro-Mechanical Structures
References
Problems
8. Optoelectronics
8.1 Photo-Detection Devices
8.1.1 Photoconductivity
8.1.2 Transverse Photo-Voltage
8.1.3 Pyroelectric Detectors
8.1.4 Photo-Diodes
8.2 Spontaneous and Stimulated Emission
8.3 Lasers
8.4 Semiconductor Lasers
Problems
9. Magnetic Materials
9.1 Magnetic Susceptibility
9.2 Diamagnetism
9.3 Paramagnetism
9.4 Ferromagnetism
9.5 Giant Magnetoresistance
9.6 Magnetic Memory
References
Problems
10. Superconductivity
10.1 Properties of Superconductors
10.2 The Meissner Effect
10.3 The London Equations
10.4 The BCS Theory
10.5 Superconducting Tunneling
10.6 High-Tc Materials
References
Problems
Appendices
A. The Hydrogen Atom
A.1 Separation of the Angular Equation
A.2 The Radial Equation
B. Impurity Insertion
B.1 Impurity Diffusion
B.2 Ion Implantation
C. Semiconductor Properties
D. Some Fundamental Constants
Index
1. Introduction
1.1 Modern VLSI
1.2 The Driving Forces for Continued Integration Growth
1.3 Moore's Law
1.4 Types of Materials
References
2. The Crystalline Nature of Materials
2.1 The Various States of Matter
2.2 Space Lattices
2.3 Crystalline Directions
2.4 X-Ray Diffraction
References
Problems
3. The Wave Mechanics of Electrons
3.1 The Photoelectric Effect
3.2 Electrons as Waves
3.3 The Schrödinger Equation
3.4 Some Simple Potentials
3.5 Tunneling Through Barriers
3.6 Quantum Wells
3.7 The Particle in a Box
3.8 Atomic Energy Levels
References
Problems
4. Semiconductors
4.1 Periodic Potentials
4.2 Bloch's Theorem and Brillouin Zones
4.3 The Kronig-Penney Model
4.4 Nearest-Neighbor Coupling-The Tight-Binding Approach
4.5 Three Dimensions and the Band Structure for Si and GaAs
4.6 Effective Mass of the Electron
4.7 Alloys and Heterostructures
4.8 The Atoms in Motion
4.9 Types of Materials
Problems
5. Electrical Transport
5.1 Fermi-Dirac Statistics
5.2 Intrinsic Semiconductors
5.3 Extrinsic Semiconductors
5.4 Electrical Conductivity
5.5 Conductivity in a Magnetic Field
5.5.1 Low Magnetic Field
5.5.2 High Magnetic Field
5.5.3 The Quantum Hall Effect
5.6 Majority and Minority Carriers
5.7 Lifetimes, Recombination, and the Diffusion Equation
5.8 The Work Function
References
Problems
6. Semiconductor Devices
6.1 The p-n Junction
6.1.1 Electrostatics of the p-n Junction
6.1.2 Current Flow in p-n Junctions
6.1.3 Diodes Under Large Reverse Bias
6.2 The Bipolar Transistor
6.2.1 Current Flow in the BJT
6.2.2 The Current Gain a
6.3 The Metal-Semiconductor Junction
6.4 The Schottky-Gate Transistor
6.5 The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
6.5.1 The MOS Structure and the Surface Channel
6.5.2 The MOSFET Characteristics
6.6 The High-Electron-Mobility Transistor
6.7 Complementary MOS Structures
6.7.1 The Complementary Circuit
6.7.2 The DRAM Cell
References
Problems
7. Dielectric Material
7.1 Dielectric Effects
7.1.1 Lattice Polarization
7.1.2 Electronic Polarizability
7.2 Piezoelectric Effects
7.3 Ferroelectric Material
7.4 Pyroelectric Effects
7.5 Micro-Electro-Mechanical Structures
References
Problems
8. Optoelectronics
8.1 Photo-Detection Devices
8.1.1 Photoconductivity
8.1.2 Transverse Photo-Voltage
8.1.3 Pyroelectric Detectors
8.1.4 Photo-Diodes
8.2 Spontaneous and Stimulated Emission
8.3 Lasers
8.4 Semiconductor Lasers
Problems
9. Magnetic Materials
9.1 Magnetic Susceptibility
9.2 Diamagnetism
9.3 Paramagnetism
9.4 Ferromagnetism
9.5 Giant Magnetoresistance
9.6 Magnetic Memory
References
Problems
10. Superconductivity
10.1 Properties of Superconductors
10.2 The Meissner Effect
10.3 The London Equations
10.4 The BCS Theory
10.5 Superconducting Tunneling
10.6 High-Tc Materials
References
Problems
Appendices
A. The Hydrogen Atom
A.1 Separation of the Angular Equation
A.2 The Radial Equation
B. Impurity Insertion
B.1 Impurity Diffusion
B.2 Ion Implantation
C. Semiconductor Properties
D. Some Fundamental Constants
Index
Book details
ISBN:
9780122541612
Page Count: 432
Retail Price
:
£78.00
Ohring: ENGINEERING MATERIALS (1995, ISBN: 0-12-524995-0)
Audience
Third-year undergraduates in electrical engineering departments, also materials science. The book will also be a useful practical introduction to those in the field who need a basic introduction to the subject matter
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